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We report new experimental effects to the stage-matching properties of a BaGa4Se7 crystal for harmonic era of a Nd:YAG laser-pumped AgGaS2 optical parametric oscillator (OPO) plus a CO2 laser…

In new a long time, new nonlinear optical components have already been actively developed to generate coherent tunable light-weight sources while in the mid-infrared (mid-IR) A part of the spectrum made use of in a variety of…

Like a promising nonlinear optical crystal in the infrared region, BaGa4Se7 also shows phonon strongly connected polariton dynamics with terahertz waves and high nonlinear coefficients for terahertz generation on account of phonon resonances. During this function, we researched the phonon structures of BaGa4Se7 crystal, with the two polarized Raman spectroscopy and theoretical calculations. Theoretical calculations current the phonon dispersion curves, DOS, and vibration modes. Our Raman manner assignments and phonon calculations clearly show consistencies in phonon energies, phonon types, and vibration Instructions. We also mentioned 9 strongest Raman peaks�?vibration method photographs and Raman tensors.

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BaGa4Se7 is a promising nonlinear optical crystal at infrared frequencies and exhibits fascinating terahertz phonon-polaritons and superior nonlinear coefficients for terahertz generation. Phonons will be the key players in infrared absorptions as well as photon-phonon resonance phenomena at terahertz frequencies. In this article, we study the phonon structures of BaGa4Se7 crystal, with polarized Raman spectroscopy and theoretical calculations for phonon dispersion curves, density of states and vibration modes.

Due to the fantastic comprehensive performance and also the important software value in laser industry, they've got attracted A lot attention in your own home and abroad. The progress of crystal expansion and laser output of BGSe and BGGSe are summarized, and the long run improvement is prospected.

The BaGa4Se7 (BGSe) crystal is a superb mid- and far-IR nonlinear optical crystal, but typically reveals an unexpected residual absorption peak all over fifteen μm which significantly deteriorates the crystal efficiency. The structural origin of residual absorption continues to be below discussion.

′�?, having a frequency of 295 cm−one, is attributed for the stretching vibration of Ga–Se bonds. The 2-phonon absorption of the 295 cm−1 phonon corresponds on the crystal IR absorption edge, rather then the residual absorption peak. Density functional concept computations demonstrate which the residual absorption from the BGSe crystal originates through the OSe defect (Se is substituted by O).